Shallow junction determination and boron profiling using electrochemical capacitance-voltage (ECV)

Publication Issue: 
Volume 30, Number 1-4, 2009
Page No: 
37
Date Received: 
Thursday, February 26, 2009
Authors' Name: 
U. Hashima
S Niza Mohammad Bajuria
Nur Hamidah Abdul Halima
Burhanudin Yeop Majlisb
Authors' Affiliation and Address: 
aInstitute of Nano Electronic Engineering, Universiti Malaysia Perlis (UniMAP), 01000 Kangar, Perlis
bInstitute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia (UKM), 43600 UKM Bangi, Selangor
Abstract: 

A method for determining the carrier concentration profile and the depth of p-n junction
boron diffusion in silicon using electrochemical capacitance-voltage (ECV) technique is
studied. Boron profiles obtained show to be agreed with theoretical profiles and junction
depths shows no significant differences compared to theoretical calculation. Therefore the
ECV technique is found to be suitable for profiling the diffusion process and to determine
the electrical junction depth.

Manuscript: 
FileSize
PDF icon [037-041]-hashim.pdf110.32 KB

UNA