Photoacoustic characterization of CuSe metal chalcogenide semiconductor using phase signal analysis

Publication Issue: 
Volume 29, Number 3&4, 2008
Page No: 
77
Date Received: 
Wednesday, December 26, 2007
Authors' Name: 
J. Y. C. Liewa
Z. A. Taliba
W. M. M. Yunusa
Z. Zainalb
S. A. Halima
K. P. Lima
M. M. Moksina
W. D. W. Yusoffa
Authors' Affiliation and Address: 
aDepartment of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM, Serdang
bDepartment of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 UPM, Serdang
Abstract: 

Open photoacoustic cell analysis has been done on CuSe metal chalcogenide semiconductor
to obtain thermal and carrier transport properties. The thermal diffusivity, carrier diffusion
coefficient, surface recombination velocity and recombination lifetime of the CuSe were
determined from the photoacoustic phase signal-frequency analysis. The experimental
results show that the surface recombination velocity decreases with the increasing of CuSe
sample thickness. The results indicate an increasing trend of band-to-band recombination
lifetime in conjunction with the increasing of sample thickness.
I. INTRODUCTION
Copper selenide (CuSe) is an interesting
semiconductor compound with various applications in
solar cells, super ionic conductors, photo-detectors,
photovoltaic cells and Shottky-diodes [1,2]. The
attraction of copper selenide also lies in the feasibility of
producing ternary material, CuInSe2 by incorporating
indium into this binary compound [3]. Thermal
conductivity and thermal diffusivity are very important
physical parameters in device modelling. In
semiconductor material characterization, two of the most
important parameters are the bulk recombination lifetime
and the surface recombination velocity. Their knowledge
allows the optimization of semiconductor device design
and a direct control of the semiconductor material
manufacturing process [4]. The photoacoustic (PA)
technique has been recognized as an important tool for
studying thermal and transport properties of
semiconductor [5-7]. Our current research efforts are
directed towards characterizing thermal and carrier
transport properties of

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