Electro-optical Characterisation of a Complementary Metal-Oxide Semiconductor Image Sensor for Optical Imaging Application

Publication Issue: 
Volume 39, Issue 1, 2018
Page No: 
10011
Date Received: 
Tuesday, October 31, 2017
Authors' Name: 
Nurul Farah Rosli
A T Abdul Rahman
Hafiz M Zin
Authors' Affiliation and Address: 
Advanced Medical and Dental Institute, University Sains Malaysia, Bertam, 13200 Kepala Batas, Penang, Malaysia
Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
Faculty of Applied Sciences, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
Institute of Nano Optoelectronics Research and Technology, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia
Abstract: 
Advances in Complementary Metal Oxide Semiconductor (CMOS) Active Pixel Sensor (APS) technology has many potentials for application in optical imaging techniques. CMOS APS offers high speed read out and on-chip signal processing not available from the predecessor technology, charge couple device (CCD). Performance of a commercial ON Semiconductor’s CMOS, MT9J003 was characterised for application in 3D optical imaging system. This work focuses on the electro-optical performance of the sensor. Two techniques were used, the mean-variance and the photon transfer to determine the sensor conversion gain, the noise and the dynamic range of the sensor. Images at different LED illumination levels were captured by the sensor to obtain the relationship between the mean signal and the noise from the images using in-house computer programme developed with LabVIEW (National Instruments, Austin, TX). Photon transfer technique allows separation of the shot noise in the sensor from the other types of noises that are inseparable using mean-variance. Mean-variance underestimates the conversion gain of the CMOS. Results indicate that the photon transfer provides a more accurate estimation of the electro-optical performance of a CMOS APS.
Manuscript: 
FileSize
PDF icon JFM2018_V39No1_100011.pdf426.39 KB

UNA