Contributions of lateral current path to p-n junction GaN-based LEDs performance

Publication Issue: 
Volume 29, Number 3&4, 2008
Page No: 
Date Received: 
Wednesday, December 26, 2007
Authors' Name: 
M. F. Othman
A. Abdul Aziz
M. R. Hashim
Authors' Affiliation and Address: 
Nano-Optoelectronics Research Technology and Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia

In recent years, great progress has been made in the
development of high-quality III-nitride electronics and
optoelectronics devices. GaN-based light emitting diodes
(LEDs) are one of the optoelectronics devices that attract
the most attentions for blue-light emission, which is the
base of white-light LEDs with yellow phosphors. LEDs
are regarded as the most important light source in the
next generation solid-state lightning owing to advantages
in energy efficiency, long life, vivid colors, high
reliability, environmental protection, safety and multiple
applications [1-3]. However, the GaN-based LEDs have
a critical weakness in its fabrication that involves the use
of lateral carrier injection type due to the absence of
appropriate conducting substrates. Due to the lateral
device configuration, current crowding problem is often
encountered and impedes the development of the
efficient GaN-based LEDs.

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